H5N5006FM silicon n channel mos fet high speed power switching ade-208-1112 (z) 1st. edition mar. 2001 features low on-resistance: r ds(on) = 2.5 typ. low leakage current: idss = 1 ? max (at vds = 500 v) high speed switching: tf = 15 ns typ (at vgs = 10 v, vdd = 250 v, id = 1.5 a) low gate charge: qg = 14 nc typ (at vdd = 400 v, vgs = 10 v, id = 3 a) avalanche ratings outline 1 2 3 to-220fm d g s 1. gate 2. drain 3. source
H5N5006FM 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss ?0 v drain current i d 3a drain peak current i d (pulse) note1 12 a body-drain diode reverse drain current i dr 3a body-drain diode reverse drain peak current i dr (pulse) note1 12 a avalanche current i ap note3 3a channel dissipation pch note2 25 w channel to case thermal impedance q ch-c 5.0 ?/w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? notes: 1. pw 10 ?, duty cycle 1% 2. value at tc = 25? 3. tch 150?
H5N5006FM 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 500 v i d = 10 ma, v gs = 0 gate to source leak current i gss ?.1 ? v gs = ?0 v, v ds = 0 zero gate voltage drain current i dss 1 a v ds = 500 v, v gs = 0 gate to source cutoff voltage v gs(off) 3.0 4.5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) 2.5 3.0 i d = 1.5 a, v gs = 10 v note4 forward transfer admittance |y fs | 1.5 2.5 s i d = 1.5 a, v ds = 10 v note4 input capacitance ciss 365 pf v ds = 25 v output capacitance coss 35 pf v gs = 0 reverse transfer capacitance crss 8 pf f = 1 mhz turn-on delay time td(on) 20 ns i d = 1.5 a rise time tr 12 ns v gs = 10 v turn-off delay time td(off) 48 ns r l = 167 fall time tf 15 ns rg = 10 total gate charge qg 14 nc v dd = 400 v gate to source charge qgs 2 nc v gs = 10 v gate to drain charge qgd 8 nc i d = 3 a body-drain diode forward voltage v df 0.85 1.3 v i f = 3 a, v gs = 0 body-drain diode reverse recovery time trr 270 ns i f = 3 a, v gs = 0 body-drain diode reverse recovery charge qrr 0.8 c dif/dt = 100 a/? note: 4. pulse test
H5N5006FM 4 main characteristics 20 10 2 0.2 1 0.1 0.3 1 3 10 300 100 0.02 0.01 0.1 50 0.05 0.5 5 0.005 30 1000 10 s 1 ms 100 s dc operation (tc = 25 c) ta = 25 c pw = 10 ms(1shot) 0 4 8 12 16 20 v = 4.5v gs 5 v 5.5 v 8 v 10 v 6 v 5 4 3 2 1 5 4 3 2 1 0 246810 tc = 75 c 25 c ?5 c 40 30 20 10 0 50 100 150 200 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area operation in this area is limited by r ds(on) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v = 10 v ds pulse test drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test
H5N5006FM 5 20 16 12 8 4 0 48 12 16 20 i = 3 a d 1 a 2 a 0.1 0.5 2 10 0.2 1 5 2 1 0.5 0.2 0.1 v = 10 v, 15 v gs 5 10 10 8 6 4 2 ?0 0 40 80 120 160 0 v = 10 v gs i = 3 a d 2 a 1 a 0.1 0.2 1 210 10 2 5 1 0.2 0.5 0.1 0.5 5 tc = ?5 c 25 c 75 c gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) pulse test drain to source on state resistance r ds(on) ( w ) static drain to source on state resistance vs. drain current pulse test drain current i d (a) drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) ds v = 10 v pulse test case temperature tc ( c) static drain to source on state resistance r ds(on) ( w ) static drain to source on state resistance vs. temperature pulse test
H5N5006FM 6 0 50 100 150 200 250 1000 100 200 500 20 50 10 5 v = 0 f = 1 mhz gs ciss coss crss 2 1 0.1 0.2 1 2 10 5 1000 200 500 100 20 50 10 di / dt = 100 a / s v = 0, ta = 25 c gs 0.5 1000 300 100 30 10 0.1 0.2 1 210 20 r t d(on) t d(off) t t f v = 10 v, v = 250 v pw = 5 s, duty < 1 % r =10 gs dd g 0.5 5 1 3 1000 800 600 400 200 0 20 16 12 8 4 8 16243240 0 v = 400 v 250 v 100 v dd i = 3 a d v ds v gs v = 100 v 250 v 400 v dd reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode rreverse recovery time typical capacitance vs. drain to source voltage capacitance c (pf) drain to source voltage v ds (v) switching time t (ns) drain current i d (a) switching characteristics gate char g e q g ( nc ) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics
H5N5006FM 7 vin monitor d.u.t. vin 10 v r l v = 250 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 10 90% 10% t f 0 0.4 0.8 1.2 1.6 2.0 5 4 3 2 1 v = 0 v gs 5, 10 v 5 4 3 2 1 -50 0 50 100 150 200 0 i = 10ma d 1ma 0.1ma v = 10 v ds source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) pulse test case temperature tc ( c) gate to source cutoff voltage vs. case temperature gate to source cutoff voltage v gs(off) (v) switching time test circuit waveform
H5N5006FM 8 10 100 1 m 10 m 100 m 1 10 1 0.3 0.1 0.03 0.01 3 0.001 0.003 1shot pulse d = 1 0.5 0.2 0.1 0.05 0.02 0.01 tc = 25 c dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 5.00 c/w, tc = 25 c q g q q pulse width pw (s) normalized transient thermal impedance g s (t) normalized transient thermal impedance vs. pulse width
H5N5006FM 9 package dimensions 10.0 0.3 7.0 0.3 3.2 0.2 12.0 0.3 0.6 2.8 0.2 2.5 0.2 17.0 0.3 14.0 1.0 0.5 0.1 2.5 4.45 0.3 5.0 0.3 2.0 0.3 0.7 0.1 2.54 0.5 2.54 0.5 1.2 0.2 1.4 0.2 f hitachi code jedec eiaj mass (reference value) to-220fm conforms 1.8 g as of january, 2001 unit: mm
H5N5006FM 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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